Single Temperature Scan Determination of Defect Parameters in DLTS Experiment

L. Dobaczewskia, Z. Kanclerisb, K. Bonde Nielsenc and A.R. Peakerd aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland bSemiconductor Physics Institute, Vilnius, Lithuania cInstitute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark dCentre for Electronic Materials, University of Manchester, Institute of Science and Technology, Manchester, UK

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Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.

DOI: 10.12693/APhysPolA.92.724 PACS numbers: 68.55.Ln, 71.55.Cn, 73.40.Lq