Substrate-Induced Strain in Epitaxial Lead Chalcogenides by Galvanomagnetic Effect Rotational Dependence
N.N. Berchenko, O.A. Dobriansky, A.V. Korovin, A.Yu. Nikiforov, V.S. Yakovyna
"Lviv Polytechnic" State University, 12 Bandera St, 290646 Lviv, Ukraine

and H. Zogg
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, 8005 Z├╝rich, Switzerland
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On the example of the PbTe and Pb0.77Sn0.23Te on BaF2 the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch-thermally induced strains in semiconductors with multivalley band structure is discussed.
DOI: 10.12693/APhysPolA.92.715
PACS numbers: 72.20.My, 72.80.Jc