FIR Magnetooptical Measurements on MOCVD Grown InAs
T. Andrearczyk, K. Karpierz, R. Bożek, R. Stępniewski and M. Grynberg
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
Full Text PDF
In this paper we report results of magnetooptical measurements done on standard InAs MOCVD layers grown on GaAs. Extremely narrow lines (half-widths of the order of 20 mT) - narrower than found by other authors in high quality MBE InAs epilayers on GaAs - as well as the lines of typical half-widths have been found both in the photoconductivity spectra and in the transmission spectra. A detailed comparison with the theoretical dependence of shallow donor and Landau level energies on magnetic field leads to the conclusion that they originate from cyclotron resonance and impurity-shifted cyclotron resonance transitions in that material.
DOI: 10.12693/APhysPolA.92.699
PACS numbers: 72.40.+w, 71.55.-i, 78.30.-m