SiO2 Layer Charge State Variation in Fowler-Nordheim Tunneling Regime |
| I. Strzałkowski and M. Kowalski Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland |
| Received: May 14, 1997; revised version: July 9, 1997 |
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| The charge build-up and its changes in the amorphous SiO2 layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO2 traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented. |
| DOI: 10.12693/APhysPolA.92.585 PACS numbers: 72.20.Jv, 73.40.Qv |