Thin Film Crystallinity and Substrate Materials in Atomic Graphoepitaxy of YBa2Cu3Ox |
| S. Miyazawa, M. Mukaida and M. Sasaura NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan |
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| The complexity of a-/c-axis oriented growth of YBa2Cu3Ox thin films is reviewed from the viewpoint of controlling a-axis preferred thin film growth. Perfectly c-axis in-plane-aligned a-axis oriented YBa2Cu3Ox thin films, or "pure" a-axis oriented films, can be grown on the (100) face of tetragonal K2NiF4-type substrates by template growth process. A new growth mechanism called atomic graphoepitaxy is presented as a growth model. Transmission electron microscopy reveals that the films on a (100) SrLaGaO4 substrate consist of domains surrounded by anti-phase and stackingfault boundaries. This domain formation can be well explained by substrate surface irregularities inherent in the SrLaGaO4 crystal. The formation of defects in microstructures in "pure" a-axis oriented YBa2Cu3Ox thin films is also modeled based on our atomic graphoepitaxial growth model. |
| DOI: 10.12693/APhysPolA.92.85 PACS numbers: 74.76.Bz, 74.80.-g, 68.35.-p |