Epitaxially Induced Defects in Sr- and O-doped La2CuO4 Thin Films Grown by MBE: Implications for Transport Properties

J.-P. Locqueta and E.J. Williamsa,b aIBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland bDépartement de Physique de la Matière Condensée, Université de Genève 1211 Genève, Switzerland

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In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-Tc thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.

DOI: 10.12693/APhysPolA.92.69 PACS numbers: 61.72.Nn, 74.62.Fj, 81.15.Hi, 74.72.Dn