Growth and Structure of Buffer Layers for High Temperature Superconducting Films |
| K. Fröhlich, A. Rosová, D. Machajdík, J. Šouc Institute of Electrical Engineering, SAS, 842 39 Bratislava, Slovakia A. Figueras Institut de Ciencia de Materials, CSIC, 08193-Bellaterra, Barcelona, Spain F. Weiss, B. Chenevier LMGP, ENSPG, BP 46, 38402 Saint Martin d'Heres, France and J. Snauwaert Katholieke Univ. Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium |
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| We have studied thin CeO2 buffer layers prepared by aerosol MOCVD on (1102) Al2O3 substrate at high deposition temperature, Td= 900°C. A texture analysis by X-ray diffraction showed a high degree of epitaxial character of CeO2 films. A study of the microstructure by transmission electron microscopy revealed that the CeO2 films are in a relaxed state being composed of slightly misoriented blocks surrounded by dislocations. The films are smooth, giving mean square root values of the surface roughness measured by atomic force microscopy up to 1 nm. |
| DOI: 10.12693/APhysPolA.92.255 PACS numbers: 68.55.Jk |