Role of Crystal-Melt Interface and Surface Tension on Czochralski Growth of Substrate Materials with K2NiF4 Structure
M. Berkowski, J. Fink-Finowicki and M. Gutowski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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Crystal-melt interface was investigated during Czochralski growth of SrLaGaO4 and SrLaAlO4 crystals on ⟨001⟩ oriented seeds. Relations between the ratio of the core diameter, grown on (001) plane, and the crystal diameter, as a function of seed rotation speed were determined. It was confirmed that it is possible to control the core diameter during the crystal growth. A new module was introduced into the crystal growth controlling program. It enables to estimate the surface tension coefficient between crystal and melt at the beginning of crystallization. This value is then used to compute proper corrections for automatic weighting system.
DOI: 10.12693/APhysPolA.92.197
PACS numbers: 81.10.-h, 81.10.Fq, 47.20.Dr, 68.10.Cr