Investigation of As Grown and Induced Structural Defects in SrLaXO4 (x = Al, Ga) Crystals |
| W. Ryba-Romanowski, S. Gołąb, P. Dereń, G. Dominiak-Dzik, W.A. Pisarski Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 937, 50-950 Wrocław, Poland and A. Gloubokov Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland |
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| SrLaGaO4 and SrLaAlO4 substrates grown by the Czochralski method have no twins or subgrains however they show strong tendency to form point defects. The nature of these defects is not well understood yet. They may be associated with deviations from stoichiometry andor oxygen atoms located in the interstitial positions. Virtually all title crystals grown by the Czochralski method display various colours from light green to deeply red owing to light absorption by point defects. Absorption centres appear to be very stable in time and resistant to usual thermal treatment. UV excitation increases the density of defects and gives rise to strong photoluminescence, otherwise too weak to be observed. |
| DOI: 10.12693/APhysPolA.92.191 PACS numbers: 78.55.Hx, 42.70.Hj |