Investigation of Crystal Growth of SrPrGaO4 and SrLaGaO4 |
| R. Uecker, P. Reiche, S. Ganschow Institute of Crystal Growth, 12489 Berlin, Germany D.-C. Uecker Institute of Applied Chemistry, Berlin, Germany and D. Schultze Federal Institute for Materials Research and Testing, Berlin, Germany |
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| Single crystals of SrPrGaO4 and SrLaGaO4 have been grown using the Czochralski technique. Both materials melt incongruently at 1462°C and 1516°C. The non-stoichiometric crystals contain more strontium than the starting melts. Constitutional supercooling is retarded by special growth conditions and optimum melt composition. Because of their small mismatch both crystals are recommended as substrates for YBa2Cu3O7-x epitaxy. |
| DOI: 10.12693/APhysPolA.92.23 PACS numbers: 81.10.Fq, 81.05.Je, 81.30.Dz |