Scanning Force Microscopy on Laser Ablated Silicon Nitride Films
C. Vrînceanu, C. Flueraru
Institute of Microtechnology, P.O. Box 38-160, Bucharest 72225, Romania

M. Dinescu
Institute of Atomic Physics, P.O. Box MG-6, Bucharest 76900, Romania

and E. Vasile
METAV S.A., Zapada Mieilor 16-18, Bucharest 71529, Romania
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The following paper presents a study on laser-ablated silicon nitride films, obtained by the laser reactive ablation method. The aim of this paper is to investigate silicon nitride film surfaces, first by scanning electron microscopy and then, at a better resolution and a greater magnification, by the scanning (atomic) force microscopy technique.
DOI: 10.12693/APhysPolA.91.1009
PACS numbers: 68.55.Jk, 61.16.Ch, 61.16.Bg