High-Pressure Diffraction Study of Ga1-xAlxAs |
| W. Paszkowicz, E. Dynowska, Z.R. Żytkiewicz, D. Dobosz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland and J.W. Otto DESY/HASYLAB, Notkestrasse 85, 22603 Hamburg, Germany |
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| The Ga1-xAlxAs sample of x=0.5 was prepared from a high quality single crystal grown by electroepitaxy on GaAs. The high-pressure diffraction experiments were performed using a diamond anvil cell and a germanium solid state detector. The zinc-blende phase is stable up to about 17.5 GPa on uploading. A high-pressure phase manifests itself at about 17 GPa, a complete phase change occurs at 18.7 GPa. On downloading, the zinc-blende phase reappears at about 10 GPa. The powder pattern of the high-pressure phase shows some similarities with the GaAs high pressure phases. |
| DOI: 10.12693/APhysPolA.91.993 PACS numbers: 62.50.+p, 64.30.+t, 64.70.Kw |