Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry |
| A. Misiuk Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland J. Härtwig, E. Prieur, M. Ohler European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France J. Bąk-Misiuk, J. Domagała Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland and B. Surma Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland |
| Full Text PDF |
| The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects. |
| DOI: 10.12693/APhysPolA.91.987 PACS numbers: 61.10.-i, 61.72.Yx, 81.40.Vw |