X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction
V. Khrupa
Department of Physics, Science Laboratories, University of Durham, South Road, Durham, DH1 3LE, U.K.

S. Krasulya, V. Machulin, L. Datsenko
Institute of Semiconductor Physics of the National Academy of Sciences, Kiev, Ukraine

and J. Auleytner
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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A new approach to structure perfection diagnostics of dislocation-free silicon crystals has been developed using the Bragg case of diffraction. The approach is being based on successive measurements of integral reflectivity and the spatial intensity distribution of reflected beam on the same diffraction planes of a real crystal by means of a single crystal diffractometer.
DOI: 10.12693/APhysPolA.91.981
PACS numbers: 81.40.-z, 61.66.Bi