Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure |
| L. Datsenko, V. Khrupa, S. Krasulya Institute of Semiconductor Physics, Prospect Nauki 45, 252028 Kiev, Ukraine A. Misiuk Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland J. Härtwig European Synchrotron Radiation Facility, 38043 Grenoble, France and B. Surma Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland |
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| The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 109 Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples. |
| DOI: 10.12693/APhysPolA.91.929 PACS numbers: 81.05.Cy, 81.40.-z |