Effect of Doping on Ga1-xAlxAs Structural Properties |
| J. Bąk-Misiuk, J. Domagała, W. Paszkowicz, J. Trela, Z.R. Żytkiewicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland M. Leszczyński High-Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland K. Regiński, J. Muszalski Institute of Electron Technology, Al. Lotników 32, 02-668 Warsaw, Poland J. Härtwig and M. Ohler ESRF, B.P. 220, 38043 Grenoble, France |
| Full Text PDF |
| The microstructure of Ga1-xAlxAs layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects. |
| DOI: 10.12693/APhysPolA.91.911 PACS numbers: 61.10.Nz, 68.55.Ln, 81.05.Ea, 81.40.-z |