Cr 3d Surface and Bulk States in Sn1-xCrxTe/Cr Crystals

E. Guziewicz, K. Szamota-Sadowska, B.J. Kowalski, E. Grodzicka, T. Story, B.A. Orłowski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland and R.L. Johnson Universität Hamburg, II Institut für Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg, Germany

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We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn0.97Cr0.03 Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn0.97Cr0.03 Te/Cr interface formation process. At the clean Sn0.97Cr0.03Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.

DOI: 10.12693/APhysPolA.91.783 PACS numbers: 79.60.-i, 68.35.Fx