Tunnelling of Direct and Indirect Excitons in Slightly Asymmetric Double Quantum Wells
D.A. Mazurenko, A.V. Akimov, E.S. Moskalenko, A.L. Zhmodikov, A.A. Kaplyanskii
A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya Str., 194021, St. Petersburg, Russia

L.J. Challis, T.S. Cheng and C.T. Foxon
Physics Department, Nottingham University, University Park NG7 2RD, Nottingham, U.K.
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We report the first studies of luminescence spectra from asymmetric double quantum wells of GaAs with widths around 100 Å differing by only one (2.8 Å) or two monolayers. Studies of the position and intensity of the direct and indirect exciton lines suggest the existence of acoustic phonon-assisted tunnelling between exciton states separated by a few meV. At temperatures 10-20 K the electron tunnelling process is fast enough to maintain thermal equilibrium between these direct and indirect excitons which are connected with holes in the same quantum well.
DOI: 10.12693/APhysPolA.90.895
PACS numbers: 73.20.Dx, 63.20.Kr