Self-Induced Persistent Photoconductivity in ZnTe-Cd1-xMnxTe1-ySey Heterojunctions
Le Van Khoi, W. Dobrowolski, A. Zakrzewski, L. Dobaczewski and R.R. Gałązka
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
Full Text PDF
At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd1-xMnxTe1-ySey heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ Vm. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd1-xMnx Te1-ySey heterojunctions can be caused by the bistable nature of the In dopant in the Cd1-xMnxTe1-ySey substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in ZnxCd1-xTe and Cd1-xMnxTe.
DOI: 10.12693/APhysPolA.90.883
PACS numbers: 71.25.Tn, 78.20.Ls, 72.80.Ga