Optical Properties of AlxGa1-xAsySb1-y Epitaxial Layers

K. Świątek Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland M. Piskorski and T.T. Piotrowski Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

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Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al0.20Ga0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.

DOI: 10.12693/APhysPolA.90.1100 PACS numbers: 78.55.Cr, 78.66.Fd