Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires
H. Straub, G. Brunthaler, W. Faschinger, G. Bauer
Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria

and C. Vieu
Laboratoire des Microstructures et de Microélectronique CNRS, 196 Avenue H. Ravera, 92225 Bagneux, France
Full Text PDF
Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd0.2Zn0.8Se/ZnSe quantum well were fabricated by a CH4/H2 reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd0.2Zn0.8Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd0.2Zn0.8Se quantum well after the patterning process.
DOI: 10.12693/APhysPolA.90.1085
PACS numbers: 78.55.Et