Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires |
| H. Straub, G. Brunthaler, W. Faschinger, G. Bauer Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria and C. Vieu Laboratoire des Microstructures et de Microélectronique CNRS, 196 Avenue H. Ravera, 92225 Bagneux, France |
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| Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd0.2Zn0.8Se/ZnSe quantum well were fabricated by a CH4/H2 reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd0.2Zn0.8Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd0.2Zn0.8Se quantum well after the patterning process. |
| DOI: 10.12693/APhysPolA.90.1085 PACS numbers: 78.55.Et |