Te Shallow Donor Solubility Mechanism in GaAs
T. Słupiński, E. Zielińska-Rohozińska and T. Harasimowicz
Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
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Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.
DOI: 10.12693/APhysPolA.90.1080
PACS numbers: 64.75.+g, 72.80.Ey