Influence of Free Carrier Concentration on Nonlinear Absorption of n-Type ZnSe Crystals
B. Sahraoui , R. Chevalier, X. Nguyen Phu, G. Rivoire
Laboratoire POMA, Propriétés Optiques des Matériaux et Applications, Université d'Angers, 2, boulevard Lavoisier, 49045, Angers cedex, France

and W. Bała
Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
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The dependence of nonlinear absorption at 532 nm of n-type ZnSe crystals upon annealing temperature and free carrier concentration is reported. The nonlinear optical absorption as well as the efficiency of degenerate four wave mixing of ZnSe are investigated. It is found that the magnitude of the nonlinear absorption decreases with an increase in the electron concentration. The nonlinear refractive index change is estimated.
DOI: 10.12693/APhysPolA.90.1070
PACS numbers: 78.20.Jq, 78.30.Hv