Raman Analysis of Zn1-xMgxSe Layers Grown on GaAs and ZnTe Substrates
M.A. Renuccia, J. Frandona, G. Głowackia,b, A. Gapińskib, F. Rozpłochb and W. Bałab
aLaboratoire de Physique des Solides de Toulouse, Université Paul Sabatier, 118, route de Narbonne, 31062 Toulouse Cedex, France
bInstitute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
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A study of the Raman scattering in Zn1-xMgxSe (0 ≤ x ≤ 0.4) epilayers grown by molecular beam epitaxy on (100) GaAs and (111)Zn ZnTe substrates has been performed. Two kinds of longitudinal optical phonon modes (LOZn-Se and LOMg-Se) were observed under excitation of the Ar+ and Kr+ laser lines at room temperature, whose frequencies and intensities depend characteristically on the Mg content.
DOI: 10.12693/APhysPolA.90.1065
PACS numbers: 78.30.-j