MBE Growth and Properties of ZnYbTe Layers
J. Sadowski, K. Szamota-Sadowska, K. Świątek, L. Kowalczyk
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

A. Abounadi and A. Rajira
Universite Montpellier 2, Place E. Bataillon, Montpellier, France
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The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb3+ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed.
DOI: 10.12693/APhysPolA.90.1060
PACS numbers: 81.15.Gh, 61.14.Hg