Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

P.O. Holz, J.P. Bergman, B. Monemar
Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden

K. Regiński and M. Bugajski
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
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The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al0.3Ga0.7As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps-1. Such inter-island migration processes have been observed till now only in growth interrupted structures.
DOI: 10.12693/APhysPolA.90.1007
PACS numbers: 78.66.Fd, 78.47.+p, 73.20.Jc