Acoustic Phonon Activated and Assisted Tunnelling in Ge:Sb,P
N. Žurauskienė and A. Dargys
Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
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The influence of lattice vibrations on the field ionization rate of shallow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon assisted tunnelling) and through the excited donor levels (phonon activated tunnelling) is considered. Both processes are shown to enhance the tunnelling rate.
DOI: 10.12693/APhysPolA.90.993
PACS numbers: 71.70.Ms, 73.40.Gk, 79.70.+q