Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
T. Tomaszewicz, K.P. Korona, R. Bożek and J.M. Baranowski
Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
DOI: 10.12693/APhysPolA.90.965
PACS numbers: 68.55.Bd, 73.20.Dx, 78.66.Fd