Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
A.A. Śliwiński, K.P. Korona, K. Pakuła and J.M. Baranowski
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
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The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
DOI: 10.12693/APhysPolA.90.955
PACS numbers: 71.55.Eq, 73.61.Ey