Optical Nonlinearities in Bulk GaAs Determined by EL2 Defect |
| M. Sudzius, L. Bastiene, S. Svitojus and K. Jarasiunas Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania |
| Full Text PDF |
| Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally. |
| DOI: 10.12693/APhysPolA.90.939 PACS numbers: 72.20.Jv |