ACTA

Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy

P. Kaczor^a, M.J. Ashwin^b, D. Dobosz^a, Z.R. Żytkiewicz^a, R.C. Newman^b and L. Dobaczewski^a
^aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
^bInterdisciplinary Research Centre for Semiconductor Materials Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7 2BZ, United Kingdom

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Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al_xGa_1-xAs samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si_Ga donors, Si_As acceptors and Si_Ga-Si_As pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm^-1 are discussed in relation to possible perturbations of the lines from Si_Ga or Si_As. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.

DOI: 10.12693/APhysPolA.90.865
PACS numbers: 78.30.Fs, 63.20.Pw, 61.72.-y