Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy
P. Kaczora, M.J. Ashwinb, D. Dobosza, Z.R. Żytkiewicza, R.C. Newmanb and L. Dobaczewskia
aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
bInterdisciplinary Research Centre for Semiconductor Materials Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7 2BZ, United Kingdom
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Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped AlxGa1-xAs samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from SiGa donors, SiAs acceptors and SiGa-SiAs pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm-1 are discussed in relation to possible perturbations of the lines from SiGa or SiAs. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
DOI: 10.12693/APhysPolA.90.865
PACS numbers: 78.30.Fs, 63.20.Pw, 61.72.-y