Magnetic Properties of Sn1-xGdxTe (0.002 ≤ x ≤ 0.09)
T. Story, M. Arciszewska, W. Dobrowolski, Z. Gołacki, M. Górska, E. Grodzicka, A. Łusakowski, E. Dynowska and B. Witkowska
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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Magnetic, transport and structural properties of bulk crystals of Sn1-xGdxTe with Gd content 0.002 < x < 0.09 and varying carrier concentrations obtained by an isothermal annealing were studied in the temperature range T = 1.5 - 80 K. We found the effect of resonant increase in antiferromagnetic spin-spin exchange interactions in the crystals with 0.025 ≤ x ≤ 0.05. No effect was found in crystals either with higher (x > 0.05) or with lower (x < 0.025) Gd concentration. The observed Gd composition dependence of the magnetic and transport properties of SnGdTe can be explained in a proposed model relating these experimental properties to the Gd composition induced shift of the position of Gd3+/2+ level with respect to the top of the valence band of SnGdTe.
DOI: 10.12693/APhysPolA.90.935
PACS numbers: 75.20.Ck, 75.30.Et