Transient Photoconductivity and Photoluminescence in InP:Cu
A. Stalnionisa, R. Adomavic̆iusa, A. Krotkusa, S. Marcinkevic̆iusa,b, R. Leonc and C. Jagadishc
aSemiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania
bDepartment of Physics II, Royal Institute of Technology, 10044 Stockholm, Sweden
cElectronic Materials Engineering Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia
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Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.
DOI: 10.12693/APhysPolA.90.931
PACS numbers: 72.40.+w, 78.47.+p, 78.55.-m