Strain Relaxation of ZnTe/CdTe and CdTe/ZnTe heterostructures: In Situ Study
F. Riesz
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary

S. Kret, G. Karczewski, T. Wojtowicz and J. Kossut
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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The strain relaxation kinetics of ZnTe/CdTe and CdTe/ZnTe heterostructures grown on GaAs substrates by molecular beam epitaxy are studied by in situ reflection high-energy electron diffraction. The observed critical layer thickness is 5 monolayers for ZnTe/CdTe and less than 1 monolayer for CdTe/ZnTe. The relaxation is anisotropic. Dislocation core parameters and relaxation rate constants were determined using a kinetic model and assuming strain-dependent activation energy of dislocation movement.
DOI: 10.12693/APhysPolA.90.911
PACS numbers: 61.14.Hg, 68.55.Bd, 68.65.+g