Kinetics of Formation and Metastability Mechanism for Thermal Donor-Related Defects in Al-Doped Silicon
P. Kaczor
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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We present a detailed investigation of the growth kinetics of aluminium-related shallow thermal donors: the K-donors. Constraints for the diffusion mechanism of oxygen in silicon at temperatures ≈ 470°C are found. A large entropy of the K-donors is considered as a possible explanation of high diffusivities and interaction radii found for the generation of the K-donors.
DOI: 10.12693/APhysPolA.90.861
PACS numbers: 71.55.Cn, 66.30.Lw, 61.72.Cc