Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs |
| K.P. Korona, J. Jasiński, A. Kurpiewski, M. Kamińska Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland C. Jagadish, H.H. Tan Department of Electronic Materials Engineering, Australian National University, ACT 0200 Canberra, Australia A. Krotkus and S. Marcinkevicius Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania |
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| Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×1014 to 5×1016 cm-2. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed. |
| DOI: 10.12693/APhysPolA.90.851 PACS numbers: 61.72.Vv, 72.20.Jv, 72.80.Ey |