Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces |
| E. Kamińska, A. Piotrowska, S. Kasjaniuk Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland and S. Gierlotka UNIPRESS, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland |
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| The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization. |
| DOI: 10.12693/APhysPolA.90.843 PACS numbers: 73.40.Ns |