Cd1-xFexSe/Fe Interface Formation Observed by Means of Photoemission Spectroscopy

E. Guziewicz, B.A. Orłowski, B.J. Kowalski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland N. Barrett, D. Martinotti, C. Guillot Laboratoire pour l'Utilisation du Rayonnement Electromagnetic, Bat. 209 D, Centre Universitaire Paris-Sud, 91405 Orsay Cedex, France and DRECAM-SRSIM, CE Saclay 91191 Gif sur Yvette, France J.-P. Lacharme and C.A. Sebenne Laboratoire de Physique des Solides, ERS 113 au CNRS, Case 79, Université Pierre et Marie Curie, 75252 Paris Cedex 05, France

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We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd0.86Fe0.14Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd0.86Fe0.14Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.

DOI: 10.12693/APhysPolA.90.805 PACS numbers: 73.20.-r, 79.60.Jv