Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si |
| M. Godlewski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland J.P. Bergman, B. Monemar Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden U. Rossner and A. Barski CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France |
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| Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons. |
| DOI: 10.12693/APhysPolA.90.789 PACS numbers: 71.55.Eq, 71.35.+z, 78.47.+p |