Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy |
| M. Godlewskia, J.P. Bergmanb, B. Monemarb, E. Kurtzc and D. Hommelc,d aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland bDept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden cExp. Physik III, Würzburg University, Am Hubland, 97074 Würzburg, Germany dInstitute of Solid State Physics, Bremen University, 28334 Bremen, Germany |
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| The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied. |
| DOI: 10.12693/APhysPolA.90.785 PACS numbers: 68.60.-p, 71.35.+z, 76.70.Hb |