Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures
T. Figielski, T. Wosiński and A. Mąkosa
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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We argue that the well-boundary roughness in a double-barrier heterostructure induces subsidiary subbands in the quantum well which, in turn, lead to the appearance of a broad shoulder beyond the principal resonance peak in the current-voltage characteristics.
DOI: 10.12693/APhysPolA.90.777
PACS numbers: 73.40.Gk, 85.30.Mn, 68.35.Ct