On GaN Crystallization by Ammonothermal Method |
| R. Dwiliński, J.M. Baranowski, M. Kamińska Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland R. Doradziński Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland J. Garczyński and L. Sierzputowski Dept. of Chemistry, Warsaw University of Technology, Pl. Politechniki 1, 00-661 Warszawa, Poland |
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| GaN crystals are grown using ammonothermal method at pressures below 5 kbar and temperatures below 550°C. In this method, GaN is synthesised from high purity metallic gallium. The main role in the low temperature GaN crystallization is played by the chemically active and dense ammonia and dissolved mineralizer. Morphology of the obtained crystals as well as solubility experiments prove that gallium nitride is dissolved and crystallised from solution. Physical properties of GaN crystals obtained using ammonothermal method depend on the growth conditions and the type of mineralizer. All GaN samples reveal very intensive photoluminescence, also at room temperature. The spectra of crystals grown with lithium compound mineralizer are shifted towards higher energies in comparison to crystals grown with potassium based mineralizer. At helium temperatures, phosphorescence is also observed. |
| DOI: 10.12693/APhysPolA.90.763 PACS numbers: 81.10.Dn |