Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN |
| P. Boguslawskia,b and J. Bernholcb aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland bDepartment of Physics, North Carolina State University, Raleigh, NC 27695, USA |
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| Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AlN were studied by quantum molecular dynamics. CN is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor Xcation-XN pairs is also discussed. |
| DOI: 10.12693/APhysPolA.90.735 PACS numbers: 71.55.-i |