Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures |
| A.E. Belyaev, S.A. Vitusevich, B.A. Glavin, R.V. Konakova Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine W. Dobrowolski, A. Mąkosa Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland L.N. Kravchenko and E.S. Gornev Science and Research Institute of Molecular Electronics, Zelenograd, Moscow district, Russia |
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| An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer. |
| DOI: 10.12693/APhysPolA.90.727 PACS numbers: 73.40.Gk, 85.30.Mn |