Parametric Phonon-Helicon Interaction in Centrosymmetric Crystals with Strain-Dependent Dielectric Constant
O.L. Artemenko
Institute of Applied Physics, Academy of Sciences of Belarus, F. Skariny Str. 16, Minsk, 220072, Belarus

and B.B. Sevruk
Institute of Physics, Academy of Sciences of Belarus, F. Skariny Str. 70, Minsk, 220072, Belarus
Received: May 15, 1995; revised version: February 27, 1996
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The process of interaction between circularly polarized coherent transverse phonons and slow electrokinetic waves in the centrosymmetric crystal placed in a longitudinal magnetic field and possessing strong strain dependence of the dielectric constant caused by the electrostriction is considered. The cut-off system of equations for the process of nonlinear four-wave interaction in crystal with a quadratic electrostriction corresponding to direct energy conversion from helicon to acoustic wave is derived. The solution is sought for numerically in the vicinity of a synchronism point determined by the intersection of helicon and phonon dispersion curves at different values of semiconductor plasma parameters. The results show the possibility of effective phonon parametric amplification in semiconductor crystal with the electroinduced elastic anisotropy.
DOI: 10.12693/APhysPolA.90.531
PACS numbers: 63.20.Kr