Erbium Luminescence in Silicon |
| H. Przybylińska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland W. Jantsch and L. Palmetshofer Johannes Kepler Universität, 4040 Linz, Austria |
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| We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed. |
| DOI: 10.12693/APhysPolA.90.83 PACS numbers: 78.55.Hx |