Optical Characterization of MBE-Grown Cd1-xMnxTe Layers by Raman Spectroscopy
W. Szuszkiewicz, E. Dynowska, E. Janik, G. Karczewski, T. Wojtowicz, J. Kossut
Institute of Physics, Polish Academy of Sciences Al. Lotników 32/46, 02-668 Warszawa, Poland

and M. Jouanne
Laboratoire de Physique des Solides, Université Paris VI, France
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In this paper we discuss a possibility of an optical characterization of thin semiconductor epilayers by Raman scattering measurements. As an example zinc blende Cd1-xMnxTe epilayers (0.66 ≤ x ≤ 1.0) have been grown by molecular beam epitaxy method and investigated by Raman scattering and X-ray diffraction. Information resulting from both methods is compared and discussed.
DOI: 10.12693/APhysPolA.89.335
PACS numbers: 63.20.-e, 75.50.Pp, 78.30.-j