Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure |
| J. Bąk-Misiuk, J. Domagała, J. Trela Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland M. Leszczyński High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland A. Misiuk Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland J. Hartwig and E. Prieur European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France |
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| AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs. |
| DOI: 10.12693/APhysPolA.89.405 PACS numbers: 81.40.-z, 65.70.+y |