Lattice Deformation Studies in Silicon Implanted with High-Energy Protons |
| K. Wieteska, K. Dłużewska Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland and W. Wierzchowski Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland |
| Full Text PDF |
| The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile. |
| DOI: 10.12693/APhysPolA.89.395 PACS numbers: 61.10.-i, 61.80.-x |