HgSe Based Mixed Crystals Doped with Fe Resonant Donors
W. Dobrowolski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
Received: October 9, 1995
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The article reviews the physical properties of semimagnetic semiconductors of the type Hg1-x-yFexAIIySe1-zBVIz and Hg1-x-yFexMnySe. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg1-xFexSe substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg1-xFexSe at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg1-xFexSe, with emphasis on features originating from the peculiar iron level position in the band structure of Hg1-xFexSe, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg1-xMnxSe:Fe, Hg1-vCdvSe:Fe, Hg1-xZnxSe:Fe, HgSe1-xTex:Fe and HgSe1-xSx:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ6 and Γ8 band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the mechanism limiting the electron mobility in the mixed alloys. Finally, topics which have not been explicitly covered in this review are mentioned and open problems are discussed.
DOI: 10.12693/APhysPolA.89.3
PACS numbers: 72.20.Fr, 72.10.Fk, 71.55.Gs